Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control.

ABSTRACT: Porous GaN has emerged as a promising material for enhancing the performance of optoelectronic devices and broadening the range of possible GaN applications. However, the electrochemical etching (ECE) process used to create porosity remains poorly understood, particularly regarding the impact of the chemical environment on pore morphology. Here, the controlled ECE of n-type GaN is systematically investigated across a range of etchant chemicals and pH values. It is shown that the identity, speciation, and relative concentrations of anionic species play dominant roles in dictating porous morphology. Through deliberate manipulation of anion compositions within an etchant solution, for example, by adjusting initial polyprotic acid concentration and/or addition of a conjugate salt, porous morph

SUBMITTER: Harris-Lee TR 

PROVIDER: S-EPMC12673525 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature