Oxidation Dynamics and Surface Chemistry of Iridium and Iridium Oxide Films Grown by Atomic Layer Deposition Using O₂ and O₃.

ABSTRACT: Atomic layer deposition of Ir and IrO₂ is demonstrated using O₂ and O₃ with various exposure conditions as reactants. The nucleation density of Ir increases with the oxidation potential of the reactants, leading to the formation of continuous and conductive films at lower thicknesses. A higher oxidation potential improves the continuity and crystallinity of the Ir films, resulting in a decrease in their resistivity. O₂-based processes result in Ir metal films regardless of O₂ exposure time due to low oxidation potential. Conversely, in O₃-based processes, deposited Ir is oxidized into IrO₂ with prolonged exposure time due to higher oxidation potential of O₃. The resistivity of IrO₂ films decr

SUBMITTER: Han JW 

PROVIDER: S-EPMC12674098 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature