A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications.

ABSTRACT: We propose a fully Si-compatible resistive-switching random-access memory (RRAM) device consisting of a Ni/Si₃N₄/Al₂O₃/p ⁺ poly-Si structure for processing-in-memory (PIM) applications fabricated through a process integration with Si CMOS compatibility. By introduction of an ultrathin Al₂O₃ tunneling layer between the Si₃N₄ switching layer and p ⁺ poly-Si bottom electrode, the leakage current in the high-resistance state (HRS) is suppressed, resulting in stable bipolar switching characteristics with a high on/off current ratio of approximately 10⁴, maintained for more than 10⁷ switching operations, as evidenced through durability measurements. Th

SUBMITTER: Lee Y 

PROVIDER: S-EPMC12676346 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature