Back-Gated WS₂-Enhanced Barium Titanate Phototransistor with Polarization-Controlled UV Responsivity and Enhanced Thermal Stability.

ABSTRACT: A high-performance ultraviolet (UV) phototransistor was developed utilizing a WS₂/barium titanate (BTO) heterostructure within a back-gated ferroelectric field-effect configuration. BTO nanoparticles, prepared via hydrothermal synthesis, were spin-coated onto a TiO₂ layer, while monolayer WS₂ was drop-cast between aluminum source/drain electrodes. The intrinsic ferroelectric field, approximately 60 kV/cm, facilitated polarization-induced carrier modulation, resulting in a low dark current of 12.3 pA without the need for an external gate bias. Ultraviolet-visible (UV-vis) spectroscopy confirmed a bandgap reduction from 3.32 eV for pure BTO to 3.13 eV for the WS₂/BTO composite, enhancing UV-vis light absorption. Raman spectroscopy further affirmed

SUBMITTER: Padhi RR 

PROVIDER: S-EPMC12679533 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature