Single-crystalline BaTiO₃-based ferroelectric capacitive memory via membrane transfer.

ABSTRACT: Ferroelectric capacitive memory (FeCAP) holds enormous potential for low-power, high-density in-memory computing. While hafnia-based FeCAPs have attracted attention for their silicon compatibility, they suffer from limited performance, such as a narrow memory window and relatively high switching fields. In this work, an FeCAP device is developed on the basis of a single-crystalline barium titanate (BTO) membrane, a perovskite oxide thin film that can be epitaxially lifted off and transferred onto a silicon platform. By engineering the device structure and epitaxy process, polarization asymmetry is introduced in capacitance-voltage characteristics. The resulting BTO-based FeCAP exhibits superior memory behavior, including a wide memory window of 308 picofarads and a low switching field of 0

SUBMITTER: Zhang X 

PROVIDER: S-EPMC12680060 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature