Band and Field Coengineered Charge Trap Memristor via Au Nanoparticle Layer for Programming Speed Enhancement.

ABSTRACT: Charge trap memristors (CTM) are promising candidates for nonvolatile analog units in crossbar array platforms, offering a pathway to next-generation high-density memory and synaptic arrays, due to their low-current operation and self-rectifying characteristics. However, the charge trapping process is inherently slow, posing a significant challenge to achieving high-speed operation. In this study, a CTM device incorporating a gold nanoparticle (Au NP) layer, referred to as NP-CTM, is proposed. This design improves programming speed by a factor of ≈47.6, while maintaining excellent stability and retention characteristics. These enhancements are attributed to the synergistic effects of enhanced electric fields and an engineered band structure, both achieved through the physical structure and

SUBMITTER: Kim G 

PROVIDER: S-EPMC12697761 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature