Coexisting Phases in NaNbO₃ Thin Films Influenced by Epitaxial Strain and Size Effects.

ABSTRACT: Antiferroelectrics are a promising class of materials for applications in capacitive energy storage and multi-state memory, but comprehensive control of their functional properties requires further research. In thin films, epitaxial strain and size effects are important tuning knobs but difficult to probe simultaneously due to low critical thicknesses of common lead-based antiferroelectrics. Antiferroelectric NaNbO₃ enables opportunities for studying size effects under strain, but electrical properties of ultra-thin films have not been thoroughly investigated due to materials challenges. Here, high-quality, epitaxial, coherently-strained NaNbO₃ films are synthesized from 35- to 250- nm thickness, revealing a transition from a fully ferroelectric state to coexisting fe

SUBMITTER: Khandelwal A 

PROVIDER: S-EPMC12697832 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature