Wafer-Scale Fabrication of Edge-Contacted Nanosheet Transistors via Alloying-Mediated Phase Engineering.

ABSTRACT: Edge contacts offer significant potential for scaling down 2D transistors due to their minimal contact resistance and reduced contact length. However, their intricate fabrication complicates reproducible large-scale production and evaluation of electrical properties, particularly for p-type channels. Here, the wafer-scale production of p-type nanosheet transistors with pure edge contacts by leveraging the alloying-mediated phase engineering of 2D MoTe₂ is demonstrated. The relative 1T'-phase stability of W _x Mo_1-x Te₂ facilitates the one-pot growth of lateral polymorphic junctions by combining the 2H-single-crystalline MoTe₂ channels with W _x Mo_1-x Te₂ edge contacts. These ed

SUBMITTER: Jang S 

PROVIDER: S-EPMC12697875 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature