Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS₂ Transistors.

ABSTRACT: Strain-dependent electronic and optical properties are one of the most appealing features of 2D semiconductors, like monolayer (1L) MoS₂. However, measuring and controlling the homogeneity of strain within the channel is crucial for next-generation MoS₂ field-effect transistors (FETs). This article reports a multiscale investigation of backgated FETs fabricated using large-area 1L MoS₂ flakes grown by liquid-precursor-intermediated chemical vapor deposition on SiO₂/Si substrates. The devices exhibit very attractive properties for ultra-low power applications, such as an I _on/I _off > 10⁶ and a normally off electrical behavior. The combination of temperature-dependent analyses of the FET transfer chara

SUBMITTER: Panasci SE 

PROVIDER: S-EPMC12697886 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature