Ultrafast avalanche photodiode exceeding 100 GHz bandwidth.

ABSTRACT: Avalanche photodiodes (APDs) demand multiplication materials with low ionization coefficient ratio (k) for high-speed and high-sensitivity photodetection. Germanium/Silicon (Ge/Si) APDs have been preferred for a decade, leveraging the exceptional multiplication property of Si and inherent complementary metal-oxide-semiconductor (CMOS) compatibility. However, the bandwidth remains tens of gigahertz, fundamentally limited by unexpected dual-carrier multiplication in high-k Ge. Here, we transcend this material limitation by introducing a uni-multiplication-carrier concept. Through a separated absorption-charge-cliff-multiplication structure, we elaborately tailor the electric field to gradient distribution within a thin Ge region, establishing electron-dominated multiplication with a signific

SUBMITTER: Shi Y 

PROVIDER: S-EPMC12698691 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature