Tuning Ultra-Narrow Direct Bandgap in α-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications.

ABSTRACT: α-Sn has recently been attracting significant interest due to its unique electronic properties. However, alternative strategies to the conventional epitaxial growth on InSb to stabilize it at room temperature and the ability to manipulate its bandgap are still a challenge. In this work, a complementary metal oxide semiconductor (CMOS)-compatible process employing microwave irradiation is used to synthetize α-Sn nanoparticles (NPs) of different size on a Si substrate. Morphological characterizations suggest the possibility to control the average Sn NPs size by means of a combined dewetting and coalescence process induced by the microwaves on Sn films. Transmission Electron Microscopy (TEM) and Synchrotron Radiation-Grazing Incidence X-ray Diffraction (SR-GIXRD) analyses confirm the stabiliz

SUBMITTER: Bertoli T 

PROVIDER: S-EPMC12710133 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature