Visualization of plasmonic diffraction-guided carrier dynamics in silicon photodetectors.

ABSTRACT: Silicon-based photodetectors operating in the near-infrared (NIR) wavelength range (λ = 700-1,100 nm) are essential for applications such as light detection and ranging, facial recognition, and eye-tracking. However, silicon's low absorption coefficient in this range limits photodetection efficiency. While recent advances in nano-diffraction structures have improved photo-absorption by increasing the effective absorption path, optimizing carrier dynamics remains challenging. In the NIR regime, photons penetrate deeply into the silicon substrate, making it critical to align the spatial distribution of photo-generated carriers with the charge collection regions. However, the angular and spatial behavior of carrier generation (CG) and collection under nano-diffraction structures remain

SUBMITTER: Uenoyama S 

PROVIDER: S-EPMC12714044 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature