Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS₂ Crystals.

ABSTRACT: Substitutional doping in transition metal dichalcogenides (TMDs) has recently garnered renewed attention due to increasing high demands for ultra-low contact resistance. However, understanding and controlling the spatial distribution of dopants in 2D TMDs is key for precise modulation of their electronic properties for next-generation electronics. In this study, chemical vapor transport (CVT) grown Nb-doped MoS₂ is used as a model system to quantitatively assess impurity distribution via time-of-flight secondary ion mass spectrometry (ToF-SIMS) and photoluminescence (PL) mapping. In-plane PL mapping of monolayers reveals spatially uniform Nb incorporation within the lateral resolution limit of ≈1 µm, whereas bulk crystals exhibit variation in Nb content, suggesting limited out-o

SUBMITTER: Tanaka I 

PROVIDER: S-EPMC12716208 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature