Native GaN/GaO_x Heterostructure Platform for Wafer-Scale Integration of High-Performance Complementary Transistors.

ABSTRACT: The drive for complementary transistors with ultra-steep subthreshold swing (SS) and minimal power consumption has intensified interest in integrating low-dimensional semiconductors with wide-bandgap materials, as silicon scaling approaches its physical limits in the post-Moore era. A central bottleneck, however, lies in dielectric/semiconductor interface engineering: existing strategies based on van der Waals transfer or nonnative dielectric deposition compromise interface quality, wafer-scale uniformity, and process compatibility, preventing practical large-scale integration. Here, we demonstrate a previously unexplored in situ oxidation strategy that directly forms a high-κ gallium oxide (GaO_x) dielectric on heavily doped n-type gallium nitride (GaN) substrates, enabling high

SUBMITTER: Liang J 

PROVIDER: S-EPMC12719557 | biostudies-literature | 2025

REPOSITORIES: biostudies-literature