Quantum sensing with spin defects in boron nitride nanotubes.

ABSTRACT: Spin defects in semiconductors are widely investigated for various applications in quantum sensing. Conventional host materials such as diamond and hexagonal boron nitride (hBN) provide bulk or low-dimensional platforms for optically addressable spin systems, but often lack the structural properties needed for chemical sensing. Here, we introduce a new class of quantum sensors based on naturally occurring spin defects in boron nitride nanotubes (BNNTs), which combine high surface area with omnidirectional spin control, key features for enhanced sensing performance. First, we present strong evidence that these defects consist of weakly-coupled spin pairs, akin to recently identified centers in hBN, and demonstrate coherent spin control over ensembles embedded within randomly oriented, dense

SUBMITTER: Rizzato R 

PROVIDER: S-EPMC12722255 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature