Optimized Rear-Interface Passivation of SnS Thin-Film Solar Cells Using a Controlled Germanium Oxide Interlayer for Enhanced Photovoltaic Performance.

ABSTRACT: Tin monosulfide (SnS) holds significant promise as a sustainable, earth-abundant absorber for thin-film solar cells (TFSCs), however, device efficiencies remain hindered by detrimental interfacial quality at the rear contact. Defect states, interfacial reactions, and uncontrolled alkali diffusion at the Mo/SnS interface introduce severe recombination losses, limiting photovoltaic (PV) performance. Here, a tailored back-interface engineering strategy employing a thermally evaporated and controlled oxidized Germanium (germanium oxide GeO_x) interlayer to passivate the Mo/SnS interface is reported. This compact, chemically stable GeO_x interlayer simultaneously improves absorber morphology, passivates deep-level defects, suppresses sodium (Na⁺) diffusion from th

SUBMITTER: Yadav RK 

PROVIDER: S-EPMC12723332 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature