Robust Material Properties in Epitaxial In₂Te₃ Thin Films across Varying Thicknesses.

ABSTRACT: Sesqui-chalcogenides serve as a critical bridge between traditional semiconductors and quantum materials, offering significant potential in applications such as thermoelectrics, phase change memory, and topological insulators. While considerable attention has been focused on antimony- and bismuth-based compounds, characterized by substantial property changes upon reduction in film thickness, indium-containing sesqui-chalcogenides like In₂Te₃ are emerging as promising candidates for photovoltaics and electronic devices. However, the effects of film thickness on the properties of In₂Te₃ remain largely unexplored. In this study, we investigate high-quality In₂Te₃ thin films grown by molecular beam epitaxy on Si(111) substrates

SUBMITTER: Buchta M 

PROVIDER: S-EPMC12723348 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature