Transforming Schottky to Ohmic Contacts via Ultrahigh-Vacuum Engineered Interfacial Alloying.

ABSTRACT: Low-resistive Ohmic contacts are needed in most microelectronics and photonics devices to connect a device to the electric circuit. Manufacturing of Ohmic contacts typically requires the doping of a semiconductor surface region as n-type or p-type (i.e., electron- or hole-doped, respectively). This task has, however, become challenging when the doping needs to be controlled with nanometer or even atomic level precision at lowered processing temperatures. In this work, we demonstrate a low-temperature method to tackle this contact manufacturing challenge using ultrathin antimony (Sb) doped germanium (Ge) nanolayers. We have integrated the method with the common lift-off processing to make Ohmic nickel (Ni) contacts on low-doped n-type Ge and Si substrates and on semi-insulating GaAs, which

SUBMITTER: Ebrahimzadeh M 

PROVIDER: S-EPMC12723635 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature