Flexible monolithic 3D complementary circuits based on 2D semiconductor inks.

ABSTRACT: Emerging flexible and wearable electronic systems require high-density, low-power circuits that can seamlessly integrate with soft substrates. Monolithic 3D (M3D) integration using 2D semiconductors offers a compelling route in fulfilling these requirements by enabling vertical stacking without compromising mechanical compliance. However, current M3D approaches utilizing 2D semiconductors often require high-temperature processing or transfer steps that hinder their scalability on flexible substrates. Herein, we present a low-temperature M3D integration strategy based on 2D semiconductor inks, which is enabled by a tailored anion-cation doping approach for precise carrier control in n- and p-type devices. Our methodology yields vertically assembled complementary metal-oxide-semiconductor ci

SUBMITTER: Zou T 

PROVIDER: S-EPMC12727738 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature