Comprehensive Structural and Interfacial Characterization of Laser-Sliced SiC Wafers.

ABSTRACT: Laser slicing has emerged as a promising low-kerf and low-damage technique for SiC wafer fabrication; however, its effects on the crystal integrity, near-surface modification, and charge-transport properties require further clarification. Here, a heavily N-doped 4° off-axis 4H-SiC wafer was sliced using an ultraviolet (UV) picosecond laser, and both laser-irradiated and laser-sliced surfaces were comprehensively characterized. X-ray diffraction and pole figure measurements confirmed that the 4H stacking sequence and macroscopic crystal orientation were preserved after slicing. Raman spectroscopy, including analysis of the folded transverse-optical and longitudinal-optical phonon-plasmon coupled modes, enabled dielectric function fitting and determination of the plasmon frequency, yielding

SUBMITTER: Chen H 

PROVIDER: S-EPMC12734574 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature