Probing phonon transport dynamics across an interface by electron microscopy.

ABSTRACT: Understanding thermal transport mechanisms across material interfaces is crucial for advancing semiconductor technologies, particularly in miniaturized devices operating under extreme power densities^1,2. Although the interface phonon-mediated processes are theoretically established^3-6 as the dominant mechanism for interfacial thermal transport in semiconductors⁷, their nanoscale dynamics remain experimentally elusive owing to challenges in measuring the temperature and non-equilibrium phonon distributions across the buried interface^8-11. Here we overcome these limitations by using in situ vibrational electron energy-loss spectroscopy (EELS) in an electron microscope to nanoscale profile temperature gradients across the AlN-SiC interface during th

SUBMITTER: Liu F 

PROVIDER: S-EPMC12738285 | biostudies-literature | 2025 Jun

REPOSITORIES: biostudies-literature