Efficient electrodynamic stripping for 12-inch wafer-scale freestanding ferroelectric oxide membranes.

ABSTRACT: Developing an efficient and non-destructive stripping method suitable for most fragile freestanding films is essential for developing industrial semiconductor integration and flexible devices. Here, we propose a rapid stripping process of directional electrodynamic decomposition based on the conductive LaNiO₃ sacrificial layer, which can effectively overcome the surface tension during solution penetration. Notably, the release rate of oxide films can be increased to 600 mm²/min, which is two orders of magnitude more than that of traditional soaking method, ascribed to the improvement of the adsorption energy and electron transfer by the electric field. The electrodynamic stripping efficiency is not limited by thickness and area size of sacrificial layers and enables n

SUBMITTER: Li H 

PROVIDER: S-EPMC12749327 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature