Room-temperature solution processing of high-mobility MoS₂ thin films.

ABSTRACT: Chemical vapor deposition (CVD) has been the prevailing approach to synthesize high-quality 2D molybdenum disulfide (MoS₂) for electronic devices. However, it typically requires a high synthetic temperature (e.g., 400-900 ˚C) and is thus costly and incompatible with flexible plastic substrates. Here we report the low-thermal-budget (e.g., at room temperature) solution-based deposition of high-mobility wafer-scale semiconducting MoS₂ thin films, enabled by a polymer-free alkylammonium-capped MoS₂ ink. In contrast to conventional long-chain polymer surfactants, the compact alkylammonium ligands exhibit adequate binding to MoS₂ and can be washed away by solvent to restore atomically clean and organics-free MoS₂ thin films. Therefore, the

SUBMITTER: Xue J 

PROVIDER: S-EPMC12749371 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature