High-κ dielectric van der Waals integration on 2D semiconductors for three-dimensional complementary logic systems.

ABSTRACT: The integration of high-κ dielectrics with two-dimensional (2D) semiconductors has long been limited by the low reactivity of their dangling-bond-free surfaces and the scalability issues of conventional deposition techniques. Here, we report a universal van der Waals (vdW) integration strategy using HfSe₂ as a high-κ precursor that is dry-transferred onto MoS₂ and WSe₂ and fully converted into amorphous HfO₂ via plasma oxidation, while preserving atomically flat vdW interfaces. The resulting HfO₂/MoS₂ and HfO₂/WSe₂ gate stacks exhibit suppressed interface trap densities (D_it ≈ 7-8 × 10¹⁰cm^-2 eV^-1) and high dielectric constants (κ ≈ 23). MoS₂ n-type

SUBMITTER: Kang T 

PROVIDER: S-EPMC12749465 | biostudies-literature | 2025 Nov

REPOSITORIES: biostudies-literature