Fabrication and characterization of n-type Ge<sub>1-x</sub>Sn<sub>x</sub>- and Si<sub>1-x-y</sub>Ge<sub>y</sub>Sn<sub>x</sub>-on-SOI junctionless transistors.
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ABSTRACT: Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future nanoelectronic applications owing to their high carrier mobilities and CMOS compatibility. However, ternary Si1-x-yGeySnx transistors have only theoretically been discussed, and there are only a few reports on lateral n-type Ge1-xSnx transistors to benchmark their material performance. The low equilibrium solid solubility of Sn in Si1-xGex (less than 1 at%) requires device fabrication processes at temperatures below the growth temperature of Si1-x-yGeySnx (x > equilibrium solubility) or at non-equilibrium conditions. Therefore, Si-based processes need to be ad
SUBMITTER: Steuer O
PROVIDER: S-EPMC12749494 | biostudies-literature | 2025 Dec
REPOSITORIES: biostudies-literature
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