Effects of Pressure on Optoelectronic Properties of Perovskite Thin Films Fabricated via Radio Frequency Sputtering.

ABSTRACT: Perovskite thin films were fabricated via the radio frequency (RF) sputtering process, which could provide great control over the crystal structure and uniformity of the films. Lead sulfide was chosen as a precursor for the lead source and further converted to lead iodide (RF-PbI₂) and methylammonium lead iodide (RF-CH₃NH₃PbI₃: RF-MAPbI₃) through a two-step gas-phase reaction. The sputtering pressure was varied from 0.3 to 0.9 Pa to investigate its influence on the characteristics of the RF-PbI₂ and RF-MAPbI₃ films. The increase in the pressure transformed the structure of the RF-PbI₂ films from a dense to porous structure; meanwhile, the grain growth behavior of the RF-MAPbI₃ was also observ

SUBMITTER: Wongcharoen S 

PROVIDER: S-EPMC12750254 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature