Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization.

ABSTRACT: Recently, it has been shown that the mobility of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) depends strongly on channel thickness and metal composition (In/Ga/Zn), resulting in a mobility-threshold voltage (V _th) trade-off. To the best of our knowledge, this work provides the first comprehensive modeling study systematically integrating density functional theory (DFT) and machine learning potential (MLP) to capture structural disorder and thickness effects on mobility-V _th in amorphous IGZO. We establish the existence of a universal mobility-V _th trade-off across diverse IGZO compositions and channel thicknesses. To unveil the origin of the universal trend, we developed a mobility model that covers the full composition and

SUBMITTER: Kim T 

PROVIDER: S-EPMC12750269 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature