Li-Well ZnO Memtransistors: High Reliability for Neuromorphic Applications.

ABSTRACT: Memtransistors are active analog memory devices utilizing ionic memristive materials as channel layers. Since their introduction, the term "memtransistor" has widely been adopted for transistors exhibiting nonvolatile memory characteristics. Currently, memtransistor devices possessing both transistor on/off functionality and nonvolatile memory characteristics include ferroelectric field-effect transistors (FeFETs) and charge-trap flash (floating gate), yet ionic memtransistors have not matched their performance. Here a facile and extendable lithium (Li)-well oxide memtransistor (LWOM) is reported as a promising candidate. Forming a Li well, analogous to an n⁺ well beneath electrodes in n-metal-oxide-semiconductor field-effect transistor (MOSFET) processes, induces Li⁺-ion migrat

SUBMITTER: Son KH 

PROVIDER: S-EPMC12759231 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature