In Situ Scanning Transmission Electron Microscopy/Transmission Electron Microscopy Study of Defect-Driven Ag Ion Dynamics and Filament Evolution in CuO Nanowire-Based Memristors.

ABSTRACT: Memristor-based technologies are pivotal for advancing in-memory computing and neuromorphic systems, addressing the von Neumann bottleneck by enabling low-power, high-density data storage. This study investigates the resistive switching (RS) behavior of p-type CuO nanowires (NWs) synthesized via thermal oxidation of a Cu foam integrated with Ag (active) and Au (inert) electrodes. In situ transmission electron microscopy (TEM) and scanning TEM (STEM) reveal the dynamic formation and dissolution of Ag-based conductive filaments under an electrical bias, driven by electrochemical metallization (ECM). The CuO NWs exhibit unique axial planar defects that facilitate Ag⁺ ion migration and nucleation, enhancing RS performance. Electrical measurements demonstrate volatile and nonvolatile

SUBMITTER: Hung CH 

PROVIDER: S-EPMC12781054 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature