ABSTRACT: Three promising small-molecule organic semiconductors, namely, 2,9-bis(heptafluoropropyl)-4,7,11,14-tetrabromo-1,3,8,10-tetraazaperopyrene (TAPP-Br4), N,N'-bis(2,2,3,3,4,4,4-fluorobutyl)-(1,7 and 1,6)-dicyano-perylene-tetracarboxylic diimide (ActivInk N1100), and diphenylethyl-3,4,9,10-benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (PhC2-BQQDI), are employed for the fabrication of n-channel thin-film transistors (TFTs). The TFTs are fabricated on rigid silicon and flexible polymeric substrates, in both the inverted staggered (bottom-gate, top-contact) and the inverted coplanar (bottom-gate, bottom-contact) device architecture. In the coplanar TFTs, the source and drain contacts are functionalized with one of four different th
