Interface-controlled antiferromagnetic tunnel junctions based on a metallic van der Waals A-type antiferromagnet.

ABSTRACT: Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials, but significant improvements in speed and packing density could be enabled by exploiting antiferromagnetic (AFM) compounds instead. Here, we report all-collinear AFM tunnel junctions (AFMTJs) fabricated with van der Waals A-type AFM metal (Fe_0.6Co_0.4)₅GeTe₂ (FCGT) electrodes and nonmagnetic semiconducting WSe₂ tunnel barriers. The AFMTJ heterostructure device achieves a tunneling magnetoresistance (TMR) ratio of up to 75% in response to magnetic field switching. Our results demonstrate that the TMR exclusively emerges in the AFM state of FCGT, rather than during the AFM-to-FM transition.

SUBMITTER: Zhao WM 

PROVIDER: S-EPMC12783712 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature