Anisotropic Charge Diffusion in Polar-Layered Oxides for Ultralong Charge Retention.

ABSTRACT: Persistent surface charge retention in dielectric oxides is critical for a wide range of electronic and energy applications, including charge-trapping memory devices, triboelectric generators, and supercapacitors. Since charge retention is intrinsically governed by charge diffusion, understanding and controlling the underlying diffusion mechanisms in charge-storing materials remain significant challenges. Here, ultralong charge retention in epitaxially grown LaAlO₃ (LAO) thin films is reported, enabled by anisotropic charge diffusion. The surface accumulation of oxygen vacancies, driven by the internal polar field, effectively suppresses out-of-plane electron hopping, allowing ≈90.9% of the initially injected charges to remain on the LAO surface after 180 h, with stable retentio

SUBMITTER: Choi S 

PROVIDER: S-EPMC12786369 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature