Highly Efficient and Stable Quantum Dot Light-Emitting Diodes Employing Sputtered SnO₂ Layer as Electron Transport Layers.

ABSTRACT: We report a novel approach to fabricating high-performance and robust quantum dot light-emitting diodes (QLEDs) utilizing sputtered SnO₂ thin films as the electron transport layer (ETL). While conventional solution-processed ZnMgO NP ETLs face limitations in mass production, the sputtering process offers advantages for uniform and reproducible thin film deposition. Herein, the structural, optical, and electrical properties of SnO₂ thin films were optimized by controlling the Ar/O₂ ratio and substrate heating temperature during sputtering. SnO₂ thin films with O₂ gas improve charge balancing in QLEDs by lowering the conduction band minimum. Furthermore, it was observed that oxygen vacancies in SnO₂ function as exciton quenchi

SUBMITTER: Choi J 

PROVIDER: S-EPMC12788106 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature