Role of the channel on the memory window of HfZrO_x ferroelectric field-effect transistors with p-type Si-doped InZnO_x channel.

ABSTRACT: To elucidate the origin of the memory window (MW) of HfZrO_x ferroelectric field-effect transistors (FeFETs) with a p-type Si-doped InZnO_x (p-Si:InZnO) channel, we perform a comparative study with thin-film transistors (TFTs) in which the HfZrO_x ferroelectric layer (FL) of the FeFETs is replaced by an HfO₂ dielectric layer (DL). The TFT is turned on at a threshold voltage (VT) of - 3 V and exhibits a reliable hysteresis-free transfer curve with a subthreshold swing (SS) of 265 mV/dec. However, when ferroelectric switching occurs in the FeFETs, the dipoles aligned downward in the FL hinder electron accumulation in the channel, yielding a high VT of approximately - 1 V. In contrast, the inverted dipoles in the FL attract electrons owing to the oppos

SUBMITTER: Park H 

PROVIDER: S-EPMC12800163 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature