Low-loss silicon nitride Kerr-microresonators fabricated with metallic etch masks via metal lift-off.

ABSTRACT: Stoichiometric silicon nitride has emerged as a widely used integrated photonic material owing to its high index of refraction, nonlinear optical properties, and broad transparency window spanning visible to mid-IR frequencies. However, silicon nitride is generally more resistant to reactive ion etching than are typical etch masks made of polymer-based resist. This necessitates resist layers that are significantly thicker than the silicon nitride and results in mask patterns which are tall and narrow. These high-aspect-ratio patterns inhibit the plasma transport of reactive ion etching, which leads to difficulties in accurately reproducing dimensions and creating well-defined, vertical waveguide sidewalls. In this work, we overcome these challenges by developing a metallic etch mask deposi

SUBMITTER: Colacion GM 

PROVIDER: S-EPMC12800175 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature