Neuromorphic Visual Receptive Field Hardware with Vertically Integrated Indium-Gallium-Zinc-Oxide Optoelectronic Memristors over Silicon Neuron Transistors.

ABSTRACT: Event-driven processing in neuromorphic vision systems, utilizing spiking neural networks, can offer improved energy efficiency compared to conventional von Neumann systems. This study proposes an artificial retinal neuron with a vertically integrated optoelectronic memristor (optomemristor) and a neuron transistor (neuristor), inspired by the visual receptive field (VRF) of the biological retina. This design performs pre-processing in the sensor to extract essential image features, such as edges. The optomemristor on top consists of an In-Ga-Zn-O thin film, which detects light, while the neuristor at the bottom is made of a Si field-effect transistor (FET), converting the spikes into an electrical signal. The VRF hardware comprises excitatory (ON-type) and inhibitory (OFF-type) cells. The

SUBMITTER: Kim HW 

PROVIDER: S-EPMC12801357 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature