A Lithium Fluoride Interfacial Layer for Low-Voltage and Reliable Perovskite Memristors.

ABSTRACT: Halide-perovskite materials have emerged as promising candidates for constructing reliable memristors, a key element for advancing neuromorphic computing systems. While several perovskite formulations have been tested, the nature of the external interfaces has not been exploited to its full potential. In this study, LiF is employed as an interfacial layer between a bromide-perovskite and the top contact. The interlayer acts as a source of Li⁺ ions that facilitate the formation of conducting filaments, combining the high ionic conductivity of a halide perovskite and the small size of the Li⁺ ion. The incorporation of a LiF layer significantly enhances device performance at low operation voltages (∼70-150 mV) with a gradual increase in conductance, rendering the devices

SUBMITTER: Pendyala NK 

PROVIDER: S-EPMC12805799 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature