Interface Engineering Using Multiple La-Doped HfO<sub>2</sub> Epitaxial Subnanolayers To Improve the Ferroelectric Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.
Ontology highlight
ABSTRACT: The fabrication of ferroelectric multilayer systems based on hafnia represents a promising approach for achieving high-performance ferroelectric devices. Electrical cycling instability is, in this regard, a key barrier to commercialization. Here, we report on the incorporation of La:HfO2 subnanolayers into an epitaxial Hf0.5Zr0.5O2 film, forming multilayer heterostructures. Ferroelectric properties of multilayers are compared with single-layer structures. We observe that wake-up and fatigue are not present up to 105 cycles in the multilayers. The improved stability is enabled by the ≈25% reduction of coercive field together with the lower leakage resulting from the columnar microstructure throughout the entire thickness without phase d
SUBMITTER: Ghiasabadi Farahani M
PROVIDER: S-EPMC12805815 | biostudies-literature | 2026 Jan
REPOSITORIES: biostudies-literature
ACCESS DATA
