A near-infrared Sn-Pb perovskite imager with monolithic integration.

ABSTRACT: Solution-processed Sn-Pb perovskites have emerged as promising candidates for near-infrared (NIR) photodetectors due to their low-cost, tunable bandgap and scalable fabrication. However, Sn²⁺ oxidation creates Sn vacancies and undesirable p-type doping, resulting in high dark current and limited detectivity, which hinder the practical deployment of Sn-Pb perovskite photodetectors. Herein, we propose a Sn(SCN)₂ inorganic molecular surface passivation strategy to suppress Sn²⁺ oxidation, significantly reduce surface defect density and enhance the optoelectronic properties (a dark current density of 10 nA cm^-2 at a bias of -0.1 V and a high specific detectivity of ~1.6 × 10¹³ Jones). Leveraging this approach, we report the monolithically

SUBMITTER: Ge C 

PROVIDER: S-EPMC12815914 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature