Interface-to-Surface Transition Induced Topological Hall Effect in 2-Dimensional SrRuO₃ Integrated on Silicon.

ABSTRACT: The topological Hall effect (THE), a transport signature emerging from chiral spin textures induced by structural symmetry breaking and the Dzyaloshinskii-Moriya interaction (DMI), represents a rich frontier in condensed matter physics with promising applications in spintronic devices. To enhance the DMI and thereby induce THE in SrRuO₃ (SRO), we introduce a structural-symmetry-breaking strategy that disrupts the Ru-O termination at the rigid substrate interface. This disruption triggers a transition from a rigid epitaxial interface to a freestanding membrane with unsaturated surface bonds, resulting in asymmetric surface terminations (Sr-O on top and Ru-O at the bottom). Unlike its rigid counterpart, which shows no detectable THE, the freestanding SRO exhibits a pronounced THE

SUBMITTER: Wang Q 

PROVIDER: S-EPMC12820467 | biostudies-literature | 2026

REPOSITORIES: biostudies-literature