Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS.

ABSTRACT: Advanced logic transistors require gate dielectrics that achieve subnanometer equivalent oxide thickness (EOT), suppress leakage, and satisfy three key requirements: (i) compatibility with RMG-like high-temperature processing, (ii) sufficient V_th tunability for multi-V_th design, and (iii) high device reliability. However, meeting all of these requirements at once has been difficult with conventional high-κ systems. In this work, we demonstrate that our Hf/Zr-based gate stacks quantitatively satisfy these conditions. (i) After a 700 °C N₂ anneal, the HZH superlattice achieves EOT = 7.3 Å, lower than conventional HfO₂-only stacks (8.5 Å) while maintaining comparable leakage. (ii) Embedding a 3 Å Al₂O₃ dipole with

SUBMITTER: Song T 

PROVIDER: S-EPMC12825384 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature