Doping-induced magnetic phase transition enables all-electrical spin control in CrSBr.

ABSTRACT: Van der Waals antiferromagnetic semiconductors are promising platforms for energy-efficient two-dimensional spintronics. However, their intrinsic spin degeneracy and the difficulty of achieving electrical spin control pose major challenges for practical device implementation. Here, we present a distinct spintronic platform based on an antiferromagnetic semiconductor CrSBr, in which carrier doping induced by gate-controlled intercalation drives a reversible, zero-field antiferromagnetic to ferromagnetic phase transition, enabling direct and full electrical control of both magnetic order and spin polarization. Exploiting this transition, we engineer CrSBr/graphene heterostructures that leverage interfacial charge transfer to spatially pattern magnetic phases, resulting in lateral spin valves

SUBMITTER: Zhao G 

PROVIDER: S-EPMC12827471 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature