Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics.

ABSTRACT: We report on the monolithic, two-step epitaxial growth of site-controlled InGaAs quantum dots via the buried-stressor method with local quantum dot density variation. As a result of high fabrication accuracy, we achieve low lateral displacements of the individual buried-stressor apertures of 17-17+19nm from the mesa centers. We provide extensive microphotoluminescence and cathodoluminescence characterization of the site-controlled quantum dots and give theoretical calculations explaining the effect of the stressor aperture on the quantum dot emission properties, positioning, and density. We show reproducibility of the nucleation process for apertures of the same size and achieve precisely positioned, low- and high-density quantum dot nucleation within one active-layer growth step. The resu

SUBMITTER: Podhorsky M 

PROVIDER: S-EPMC12828778 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature