Dipole-Driven Charge Trapping in Monolayer Janus MoSSe for Ultrathin Nonvolatile Memory Devices.

ABSTRACT: The continued scaling of flash memory technologies faces challenges such as limited operation speed, poor data retention, and interface defects inherent to conventional three-dimensional architectures. Two-dimensional (2D) materials, with van der Waals interfaces and atomic-scale thickness, offer a promising pathway to overcome these limitations by enabling efficient charge modulation while minimizing surface defects. In this work, a nonvolatile 2D flash memory device is developed employing monolayer Janus MoSSe as the charge-trapping layer and hexagonal boron nitride (h-BN) as an ultrathin tunneling barrier. The intrinsic structural asymmetry of Janus MoSSe induces a strong vertical dipole moment, resulting in enhanced charge trapping, deeper energy barriers, and directional polarization

SUBMITTER: Ko EB 

PROVIDER: S-EPMC12832604 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature