Diffusion-induced enhanced photoresponsivity and detectivity in an Ag₂S/In₂Se₃ heterostructure for a UV-visible photodetector: an experimental and computational analysis.

ABSTRACT: Photodetectors play a pivotal role in recently developed optical communication and imaging systems. Metal chalcogenide-based photodetectors are widely used for visible light photodetection. In this regard, a combined heterostructure of In₂Se₃ and Ag₂S is a promising candidate for visible light photodetection. The annealing-induced Ag₂S diffusion into the In₂Se₃ layer resulted in a high-performance photo detectivity performance of 7.32 × 10⁹ Jones. It showed the highest photocurrent of 62.35 nA during the rise phase and 67.74 nA during the decay phase, coupled with strong I _on/I _off ratios of 3.96 (rise) and 3.18 (decay). Its rise and fall times (τ _r = 7.15 and

SUBMITTER: Kumar PC 

PROVIDER: S-EPMC12833948 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature