Gallium-doped zinc oxide semiconductor nanoparticles for plasmonic applications: a combined experimental and computational study.

ABSTRACT: In this study, gallium-doped zinc oxide (GZO) nanoparticles were synthesized via a sol-gel approach followed by controlled thermal treatment, yielding nanocrystalline semiconductors with tunable Ga concentrations for advanced plasmonic applications. Structural and morphological analyses using transmission electron microscopy (TEM) revealed uniform grain distribution with particle sizes of ∼60-80 nm and the preservation of the wurtzite crystal framework. It further confirmed the successful substitution of Zn²⁺ by Ga³⁺ ions (2.5% doping), demonstrating effective doping without disrupting the lattice integrity. The analysis of the complex dielectric function, including the real (ε ₁) and imaginary (ε ₂) components, exhibited a c

SUBMITTER: Rao Nulakani NV 

PROVIDER: S-EPMC12834044 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature