Ultrafast Exciton Dynamics in Few-Layer MoTe₂ near the Direct-Indirect Bandgap Transition.

ABSTRACT: Transition metal dichalcogenides (TMDs) are of interest for a variety of material applications ranging from optoelectronics to quantum computing. The 2H semiconducting phase of MoTe₂ is promising as a material for optical devices, such as photodiodes and photovoltaics. The photophysics of such films as their thickness approaches the direct-to-indirect bandgap transition remains underexplored. Leveraging ultrathin film MoTe₂ samples fabricated through a combination of atomic layer deposition (ALD) and chemical vapor deposition (CVD), time-resolved optical spectroscopy was employed to quantify charge carrier kinetics as a function of sample thickness. Samples with thicknesses ranging from several monolayers down to a bilayer were examined. A model mechanism is proposed

SUBMITTER: Hamburger R 

PROVIDER: S-EPMC12836359 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature