High-throughput design of optoelectronic-ferroelectric heterostructure from materials to sensor-memory-computing devices.

ABSTRACT: Ferroelectric-based artificial synapses have emerged as fascinating candidates for the development of intelligent sensor-memory-computing (SMC) systems, thanks to the remarkable nonvolatile properties and abundant polarization states that ferroelectrics offer. However, simultaneously modulating the ferroelectric synapse through optical and electrical excitation is challenging. Herein, we propose a high-throughput strategy for designing optoelectronic co-modulated ferroelectric synapses. This strategy involves designing a ferroelectric field-effect transistor (FeFET) based on the Pb(Zr_0.2Ti_0.8)O₃/InGaZnO (IGZO) heterostructure, which includes an IGZO homostructure, followed by high-throughput screening of IGZO materials that enable both optical and electrica

SUBMITTER: Zhong G 

PROVIDER: S-EPMC12839522 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature