Tailoring Ge Nanocrystals via Ag-Catalyzed Chemical Vapor Deposition to Enhance the Performance of Non-Volatile Memory.

ABSTRACT: With the rapid advancement in portable electronics, artificial intelligence, and the Internet of Things, there is an escalating demand for high-density, low-voltage non-volatile memory (NVM) technologies. Germanium (Ge) nanocrystals (NCs) have emerged as a promising candidate for NVM applications; however, traditional synthesis methodologies suffer from limitations in achieving precise control over the size and density of these nanocrystals, which exert a significant influence on device performance. This study presents an innovative Ag-catalyzed chemical vapor deposition (CVD) methodology for the synthesis of Ge NCs with precisely controllable size and density on SiO₂/Si substrates, tailored for NVM applications. Scanning electron microscopy characterization confirms the success

SUBMITTER: Guo C 

PROVIDER: S-EPMC12844894 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature