2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices.

ABSTRACT: Scaled and high-quality insulators are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, the synthesis of a new 2D insulator, monolayer InO₂, which differs in stoichiometry from its bulk form is presented, over a large area (>300 µm²) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, the thickness of InO₂ is tuned such that it is 85% monolayer. The preference for monolayer formation of InO₂ is explained using molecul

SUBMITTER: Turker F 

PROVIDER: S-EPMC12848651 | biostudies-literature | 2026 Jan

REPOSITORIES: biostudies-literature